1/7 july, 3 2002 START540 npn silicon rf transistor sot343 (sc70) order code START540tr branding 540 applications ? lna for gsm/dcs, dect, pdc, pcs, pcn, cdma, w-cdma ? general purpose 500mhz-5ghz ? low noise figure: nfmin = 0.9db @ 1.8ghz, 5ma, 2v ? high output ip3 = 24dbm @ 1.8ghz, 20ma, 2v ? good ruggedness bvceo = 4.5v ? transition frequency 45ghz ? ultra miniature sot343 package description the START540 is a member of the start family that provide the market with the state of the art of rf silicon process. manufacturated in the third generation of st proprietary bipolar process, it offers the highest linearity with excellent noise figure for 4.5v breakdown voltage(bvceo). it reaches performance level only achieved with gaas products before. absolute maximum ratings symbol parameter value unit v ceo collector emitter voltage 4.5 v v cbo collector base voltage 15 v v ebo emitter base voltage 1.5 v i c collector current 40 ma i b base current 4 ma p tot total dissipation, t s = 101 180 mw t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c r thjs thermal resistance junction soldering point 270 o c/w absolute maximum ratings
START540 2/7 sot343 4 12 3 top vie w note(1): gms = | s 21 / s 12 | symbol parameter test conditions min. typ. max. unit i cbo collector cutoff current vcb = 5v, ie = 0a 150 na i ebo emitter-base cutoff current veb = 1.5v, ic = 0a 15 m a hfe dc current gain ic = 20ma, vce = 3v 100 160 nfmin minimim noise figure ic = 5ma, vce = 2v, f = 1.8ghz, z s = z s opt 0.9 db ga nfmin associated gain ic = 5ma, vce = 2v, f = 1.8ghz 16 db |s21| 2 insertion power gain ic = 20ma, vce = 2v, f = 1.8ghz 19.5 db gms (1) maximum stable gain ic = 20ma, vce = 2v, f = 1.8ghz 22.7 db p -1db 1db compression point ic = 20ma,vce = 2v, f = 1.8ghz 13 dbm oip3 ouput third order intercept point ic = 20ma,vce = 2v, f = 1.8ghz 24 dbm electrical characteristics (t j =25 o c,unless otherwise specified) pinout pin connection pin no. description 1base 3 collector 2,4 emitter
3/7 START540 common emitter s-parameters ( v ce = 2v, i c = 20ma ) f s 11 s 21 s 12 s 22 ghz mag ang mag ang mag ang mag ang 0.1 0.699 -21.6 42.32 164.0 0.009 88.9 0.942 -12.2 0.5 0.545 -89.7 27.82 119.9 0.027 58.1 0.642 -50.6 0.9 0.480 -130.0 18.42 98.1 0.036 48.1 0.431 -70.6 1 0.476 -137.4 16.86 94.0 0.038 47.2 0.397 -74.7 1.5 0.483 -166.9 11.63 76.9 0.048 41.6 0.272 -96.2 1.8 0.494 179.6 9.63 68.2 0.052 38.8 0.220 -110.7 2 0.503 172.2 8.49 63.1 0.055 36.7 0.193 -123.3 2.5 0.513 157.6 6.46 53.6 0.061 31.7 0.148 -154.4 3 0.533 147.8 5.34 45.9 0.069 26.7 0.142 -171.4 3.5 0.551 139.6 4.54 36.6 0.077 21.2 0.153 177.9 4 0.559 133.8 3.87 28.3 0.085 13.7 0.154 162.7 common emitter s-parameters ( v ce = 2v, i c = 5ma ) f s 11 s 21 s 12 s 22 ghz mag ang mag ang mag ang mag ang 0.5 0.816 -50.5 14.56 140.8 0.038 65.8 0.879 -30.3 0.9 0.715 -84.6 11.92 118.2 0.058 48.4 0.720 -49.0 1 0.695 -92.5 11.32 113.2 0.061 45.0 0.685 -53.1 1.5 0.620 -128.0 8.64 91.5 0.075 30.9 0.515 -71.9 1.8 0.589 -145.6 7.39 80.9 0.080 23.8 0.425 -81.8 2 0.581 -156.1 6.66 74.5 0.080 19.3 0.374 -88.4 2.5 0.570 -167.6 5.87 8.0 0.082 14.8 0.316 -96.8 3 0.572 167.6 4.37 51.7 0.085 5.7 0.225 -166.8 3.5 0.585 155.3 3.74 40.4 0.090 1.1 0.208 -128.4 4 0.592 146.1 3.20 30.6 0.094 -5.0 0.184 -141.2 common emitter noise-parameters ( v ce = 2v, i c = 5ma ) f f min g opt r n r n |s 21 | 2 f 50 ghz db mag ang w -dbdb 1.8 0.91 0.39 100.8 6.4 0.128 17.38 1.12 2 0.96 0.48 115.2 6.38 0.127 16.47 1.22 2.5 1.01 0.48 136.8 5.94 0.118 14.35 1.34 3 1.14 0.46 163 5.6 0.112 12.82 1.38 3.5 1.3 0.39 -160 5.2 0.104 11.46 1.42 4 1.4 0.32 -122.4 5 0.1 10.12 1.66
START540 4/7 c transistor chip b c e l=0.3 nh l=0.6 nh l3 l5 l6 c2 c=66 ff . . l=0.35 nh l1 l=0.1 nh l=0.05 nh l2 c=334 ff c=436 ff c1 c3 e . . l=0.6 nh l4 b . . symbol value symbol value symbol value tmeas 27.0 fc 0.66 xjbc 0.53 is 1.00e-16 eg 1.12 xti 3.76 ise 1.58e-11 nf 1 bf 320 nr 1 ne 3.27 vaf 70 isc 1.55e-15 br 9.52 var 2.3 ikf {0.217*((t( o c)+273.15)/ 300.15)^(-1.63)} nc 1.495 tf 3.0e-12 tr 7e-10 ptf 32.0 vtf 27.9 xtf 9.84 itf 0.498 mje 0.497 rb 10.8 rbm 2.94 mjc 0.292 rc 3.77 re 0.42 mjs 0.245 cje 421e-15 vje 1.03 ikr 8.32e-3 cjc 160e-15 vjc 0.6 xtb -0.54 cjs 112e-15 vjs 0.4 spice parameters (gummel-poon model, berkley-spice 2g.6 syntax) package equivalent circuit transistor chip data for more accuracy simulation in saturation region : adding the 5 spice parameters showed in table a and using st spice library (available on request) you can achieve a more accuracy simulation in the saturation region. st spice library is compatible with following simulators: eldo mentor (any version), spectre cadence (any version), ads (version 2001 only). table a table a (spice parameters extracted in saturation region) rw vjj enp vrp rp 1.173 0.8 2.085 {4.12*((temper+273.15)/300.15)^(0.303)} 1.00e-6 in order to avoid high complexity of the package equivalent circuit, the two emitter leads of sot-343 package are combined in one electrical connection.
5/7 START540 tape & reel dimensions mm min. typ. max a 178.5 179 179.5 c 12.8 13.0 13.5 d 20.2 n 54.5 55 55.5 t 14.4 ao 2.25 bo 2.7 ko 1.2 po 3.8 (cumulative 10 po) 4.0 4.2 (cumulative 10 po) p 4.0 device orientation top view end view 540 540 540 540
START540 6/7 package dimensions sot343 (sc-70 4 leads) 2.00-2.20 1.90-2.10 1.15-1.35 1.15 0.55-0.65 1.30 0.25-0.35 0.00-0.10 0.80-1.00 1.15-1.35 0.10-0.20 0.45
7/7 START540 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. htt p ://www.st.com
|
